din ds0290ej0400 rev.4.00 page 1 of 6 mar 28, 2011 preliminary datasheet ' 7 6 silicon p channel mos fet power switching features ? low on-resistance r ds(on) = m ? typ (v gs = C4.5 v, i d = C1.8 a) ? low drive current ? high speed switching ? 2.5 v gate drive outline package code: plsp0003zb-a (package name: sot-23) 1. source 2. gate 3. drain s d g 2 1 3 1 2 3 note: marking is 018k. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C20 v gate to source voltage v gss +8 / C12 v drain current i d C3.8 a drain peak current i d(pulse) note1 C11 a body - drain diode reverse drain current i dr C3.8 a channel dissipation pch (pulse) note2 0.8 w channel temperature tch 150 ?c storage temperature tstg C55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. when using the glass epoxy board (fr-4: 40 x 40 x 1 mm) din ds0290ej0400 (previous: din 03g1317-0300) rev.4.00 mar 28, 2011 din-tek
' 7 6 preliminary din ds0290ej0400 rev.4.00 page 2 of 6 mar 28, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C20 v i d = C10 ma, v gs = 0 v (br)gss +8 v i g = ? +100 ? a, v ds = 0 gate to source breakdown voltage v (br)gss C12 v i g = ? C100 ? a, v ds = 0 i gss ? +10 ? a v gs = ? +6 v, v ds = 0 gate to source leak current i gss ? C10 ? a v gs = ? C10 v, v ds = 0 drain to source leak current i dss C1 ? a v ds = C20 v, v gs = 0 gate to source cutoff voltage v gs(off) C0. 5 C1.5 v v ds = C10 v, i d = C1 ma r ds(on) 68 98 m ? i d = C1.8 a, v gs = C4.5 v note3 drain to source on state resistance r ds(on) 95 115 m? i d = C1.8 a, v gs = C2.5 v note3 forward transfer admittance |y fs | 4.5 6.5 s i d = C1.8 a, v ds = C10 v note3 input capacitance ciss 597 pf output capacitance coss 149 pf reverse transfer capacitance crss 93 pf v ds = C10 v v gs = 0 f = 1 mhz turn - on delay time t d(on) 18 ns rise time t r 43 ns turn - off delay time t d(off) 37 ns fall time t f 12 ns i d = C1.8 a v gs = C4.5 v r l = 5.5 ? rg = 4.7 ? total gate charge qg 6.3 nc gate to source charge qgs 1.1 nc gate to drain charge qgd 2.5 nc v dd = C10 v v gs = C4.5 v i d = C3. 8 a body - drain diode forward voltage v df C0.85 C1.1 v i f = C3. 8 a, v gs = 0 note3 notes: 3. pulse test
DTS2301 preliminary mar 28, 2011 main characteristics C10 C8C6 C4C2 0 0 ambient temperature ta (c) channel dissipation pch (w) maximum channel power dissipation curve maximum safe operation area drain to source voltage v ds (v) drain current i d (a) drain current i d (a) typical output characteristics drain to source voltage v ds (v) typical transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics (2) gate to source voltage v gs (v) drain current i d (a) gate to source cutoff voltage vs. case temperature case temperature tc (c) gate to source cutoff voltage v gs(off) (v) C0.01 C0.1 C1 C10 C100 C0.01 C0.1 C1 C10 C100 C4 C2 C6 C10 C8 C0.0001 C0.001 C0.01 C1 C0.1 0 C0.5 C1 C1.5 C2 C2.5 C3 *when using the glass epoxy board (fr-4: 40 40 1 mm) 0 0.2 0.4 0.6 0.8 1 0 50 100 150 0 C2 C4 C6 C8 C10 0 C1C2C3C4 tc = 75c C25c 25c v ds = C10 v pulse test 0 C0.5 C1 C1.5 C25 0 25 50 75 100 125 150 v ds = C10 v pulse test v ds = C10 v pulse test tc = 75c 25c C25c ta = 25c 1 shot pulse 100 s pw = 100 ms 1 ms 10 ms dc operation v gs = 0 v pulse test tc = 25 c C1.8 v C2.0 v C2.2 v C10 v C2.4 v C2.6 v C3 v C6 v C1.6 v i d = C10 ma C1 ma C0.1 ma operation in this area is limited by r ds(on) din ds0290ej0400 rev.4.00 page 3 of 6
' 7 6 preliminary din ds0290ej0400 rev.4.00 page 4 of 6 mar 28, 2011 drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (mv) static drain to source on state resistance vs. drain current drain current i d (a) drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. case temperature case temperature tc ( c) drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. case temperature case temperature tc ( c) drain to source on state resistance r ds(on) (m ) forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance |y fs | (s) zero gate voltage drain current vs. case temperature case temperature tc ( c) zero gate voltage drain current i dss (na) 0 C 100 C 200 C 300 C 400 0 C 2 C 4 C 6 C 8 C10 10 100 1000 C0.1 C1 C10 C100 30 50 70 90 110 130 30 50 70 90 110 130 C25 0 25 50 75 100 125 150 C25 0 25 50 75 100 125 150 C25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 C0.01 C0.1 C1 C10 C0.1 C1 C10 C100 C1000 C10000 C1.8 a C0.5 a C1 a pulse test tc = 25 c C1.8 a C1.8 a C1 a C10 v C4.5 v C1 a C0.5 a C0.5 a i d = C3.4 a i d = C3.4 a i d = C3.4 a pulse test v gs = C4.5 v pulse test v gs = C 2 .5 v v gs = C 2.5 v pulse test tc = 25 c C25c tc = 75c 25c pulse test v ds = C 10 v pulse test v gs = 0 v v ds = C20 v
' 7 6 preliminary din ds0290ej0400 rev.4.00 page 5 of 6 mar 28, 2011 drain to source voltage v ds (v) dynamic input characteristics gate charge qg (nc) gate to source voltage v gs (v) switching characteristics drain current i d (a) switching time t ( n s) typical capacitance vs. drain to source voltage drain to source voltage v ds (v) ciss, coss, crss (pf) input capacitance vs. gate to source voltage gate to source voltage v gs (v) ciss (pf) reverse drain current i dr (a) reverse drain current vs. source to drain voltage source to drain voltage v sd (v) body-drain diode forward voltage vs. case temperature case temperature tc (c) body-drain diode forward voltage v sdf (v) t f pulse test tc = 25c C 10v C 5v v gs = 0 v 5, 10 v C0.2 C0.3 C0.4 C0.5 C0.6 0 C4 C2 C6 C8 C10 25 50 75 100 125 150 0 C0.4 C0.8 C1.2 C1.6 C2.0 800 850 900 950 1000 1050 1100 C 10 C 8 C 6 C 4 C 202 4 8 610 10 100 1000 C0 C5 C10 C15 C20 1 10 100 1000 C 0.1 C 1 C 10 0246810 0 C20 C40 0 C4 C8 C12 C16 i d = C3.4 a tc = 25c C10 v v dd = C20 v C10 v 12 v dd = C20 v v gs v ds C5 v C5 v 16 v dd = C 10 v v gs = C 4.5 v rg = 4.7 p w = 5 s tc = 25c t d(on) t d(off) t r v ds = 0 v f = 1 mhz C1 ma i d = C10 ma v gs = 0 crss coss v gs = 0 v f = 1 mhz ciss
' 7 6 preliminary din ds0290ej0400 rev.4.00 page 6 of 6 mar 28, 2011 package dimensions d e a aa b xsa m eh e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b c d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 sc-59a plsp0003zb-a sot-23 0.011g mass[typ.] din-tek code jeita package code previous code package name sot-23 ordering information orderable part number quan tity shipping container din-tekrqjDTS2301h 3000 pcs. ? 178 mm reel, 8 mm emboss taping
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